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1. Identity statement
Reference TypeJournal Article
Sitemtc-m21b.sid.inpe.br
Holder Codeisadg {BR SPINPE} ibi 8JMKD3MGPCW/3DT298S
Identifier8JMKD3MGP3W34P/3LQF7M8
Repositorysid.inpe.br/mtc-m21b/2016/06.02.17.16
Last Update2016:06.02.17.17.30 (UTC) simone
Metadata Repositorysid.inpe.br/mtc-m21b/2016/06.02.17.16.30
Metadata Last Update2018:06.04.02.40.50 (UTC) administrator
DOI10.1063/1.4947266
ISSN0021-8979
Citation KeyFornariRappMoreAbra:2016:StPrBi
TitleStructural properties of Bi2Te3 topological insulator thin films grown by molecular beam epitaxy on (111) BaF2 substrates
Year2016
MonthApr.
Access Date2024, May 18
Type of Workjournal article
Secondary TypePRE PI
Number of Files1
Size2539 KiB
2. Context
Author1 Fornari, Celso Israel
2 Rappl, Paulo Henrique de Oliveira
3 Morelhão, Sérgio L.
4 Abramof, Eduardo
Resume Identifier1
2 8JMKD3MGP5W/3C9JJ37
3
4 8JMKD3MGP5W/3C9JGUH
Group1 CMS-ETES-SPG-INPE-MCTI-GOV-BR
2 LAS-CTE-INPE-MCTI-GOV-BR
3
4 LAS-CTE-INPE-MCTI-GOV-BR
Affiliation1 Instituto Nacional de Pesquisas Espaciais (INPE)
2 Instituto Nacional de Pesquisas Espaciais (INPE)
3 Universidade de São Paulo (USP)
4 Instituto Nacional de Pesquisas Espaciais (INPE)
Author e-Mail Address1 celso.fornari@inpe.br
2 paulo.rappl@inpe.br
3
4 eduardo.abramof@inpe.br
JournalJournal of Applied Physics
Volume119
Number16
Pages165303
Secondary MarkA1_ENGENHARIAS_III A2_MATERIAIS A2_INTERDISCIPLINAR A2_GEOCIÊNCIAS A2_ENGENHARIAS_I A2_CIÊNCIAS_AGRÁRIAS_I A2_BIODIVERSIDADE A2_ANTROPOLOGIA_/_ARQUEOLOGIA B1_QUÍMICA B1_ODONTOLOGIA B1_MEDICINA_III B1_MEDICINA_II B1_MEDICINA_I B1_MATEMÁTICA_/_PROBABILIDADE_E_ESTATÍSTICA B1_FARMÁCIA B1_ENGENHARIAS_IV B1_ENGENHARIAS_II B1_CIÊNCIAS_BIOLÓGICAS_I B1_BIOTECNOLOGIA B1_ASTRONOMIA_/_FÍSICA B2_ENSINO B2_CIÊNCIAS_BIOLÓGICAS_III B2_CIÊNCIA_DA_COMPUTAÇÃO
History (UTC)2016-06-02 17:16:30 :: simone -> administrator ::
2016-06-02 17:16:30 :: administrator -> simone :: 2016
2016-06-02 17:17:30 :: simone -> administrator :: 2016
2018-06-04 02:40:50 :: administrator -> simone :: 2016
3. Content and structure
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Content TypeExternal Contribution
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AbstractStructural properties of topological insulator bismuth telluride films grown epitaxially on (111) BaF2 with a fixed Bi2Te3 beam flux were systematically investigated as a function of substrate temperature and additional Te flux. A layer-by-layer growth mode is observed since the early stages of epitaxy and remains throughout the whole deposition. Composition of the epitaxial films produced here stays between Bi2Te3 and Bi4Te5, as determined from the comparison of the measured x-ray diffraction curves with calculations. The substrate temperature region, where the growth rate remains constant, is found to be the most appropriate to obtain ordered Bi2Te3 films. Line width of the L = 18 Bi2Te3 diffraction peaks as low as 140 arcsec was obtained, indicating high crystalline quality. Twinning domains density rises with increasing growth temperature and reducing Te extra flux. X-ray reflectivity curves of pure Bi2Te3 films with thickness from 165 to 8 nm exhibited well defined interference fringes, evidencing homogeneous layers with smooth surface. Our results demonstrate that Bi2Te3 films with very well controlled structural parameters can be obtained. High structural quality Bi2Te3 films as thin as only eight quintuple layers grown here are promising candidates for intrinsic topological insulator.
AreaFISMAT
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Languageen
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Mirror Repositoryurlib.net/www/2011/03.29.20.55
Next Higher Units8JMKD3MGPCW/3ESR3H2
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Citing Item Listsid.inpe.br/bibdigital/2013/09.24.19.30 5
sid.inpe.br/mtc-m21/2012/07.13.14.44.57 3
sid.inpe.br/mtc-m21/2012/07.13.14.57.50 2
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